Presentation + Paper
26 March 2019 Absorber and phase defect inspection on EUV reticles using RESCAN
Author Affiliations +
Abstract
Reliable photomask metrology is required to reduce the risk of yield loss in the semiconductor manufacturing process. Actinic pattern inspection (API) of EUV reticles is a challenging problem to tackle with a conventional approach. For this reason we developed an API platform based on coherent diffraction imaging. Aim: We want to verify the sensitivity of our platform to absorber and phase defects. Approach: We designed and manufactured two EUV mask samples with absorber and phase defects and we inspected them with RESCAN in die-to-database mode. Results: We reconstructed an image of an array of programmed absorber defects and we created a defect map of our sample. We inspected two programmed phase defect samples with buried structures of 3.5 nm and 7.8 nm height. Conclusions: We verified that RESCAN in its current configuration can detect absorber defects in random patterns and buried (phase) defects down to 50 × 50 nm2.
Conference Presentation
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Iacopo Mochi, Sara Fernandez, Ricarda Nebling, Uldis Locans, Patrick Helfenstein, Rajendran Rajeev, Atoosa Dejkameh, Dimitrios Kazazis, Li-Ting Tseng, and Yasin Ekinci "Absorber and phase defect inspection on EUV reticles using RESCAN", Proc. SPIE 10957, Extreme Ultraviolet (EUV) Lithography X, 109570W (26 March 2019); https://doi.org/10.1117/12.2515160
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CITATIONS
Cited by 5 scholarly publications.
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KEYWORDS
Inspection

Extreme ultraviolet

Defect detection

Photomasks

Reticles

Defect inspection

Phase measurement

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