Fabrication and characterization of p-type boron doped Cu2O thin film and Cu2O:B/n-Si heterojunction

Manu Shaji; K. J. Saji; M. K. Jayaraj

doi:10.1117/12.2529144

3 September 2019 Fabrication and characterization of p-type boron doped Cu₂O thin film and Cu₂O:B/n-Si heterojunction

Manu Shaji, K. J. Saji, M. K. Jayaraj

Proceedings Volume 11089, Nanoengineering: Fabrication, Properties, Optics, Thin Films, and Devices XVI; 110891X (2019) https://doi.org/10.1117/12.2529144
Event: SPIE Nanoscience + Engineering, 2019, San Diego, California, United States

Abstract

In this study, the doping of boron in cuprous oxide as p-type material and its application for optoelectronic device is presented. Thin films are fabricated using metallic targets of Copper and Boron by rf magnetron co-sputtering in the Ar and O₂ ambient. The X-ray diffraction spectra of the doped samples matched with cubic Cu₂O phase, with no significant peak shift compared to intrinsic Cu₂O film. Raman analysis confirmed the Cu₂O phase in both doped and un-doped films. For doped thin films optical transparency was enhanced compared to intrinsic cuprous oxide. Band gap of doped and undoped Cu₂O were 2.67 eV and 2.47 eV respectively. Heterojunction is fabricated with n-Si and the electrical properties were studied.

Citation Download Citation

Manu Shaji, K. J. Saji, and M. K. Jayaraj "Fabrication and characterization of p-type boron doped Cu₂O thin film and Cu₂O:B/n-Si heterojunction", Proc. SPIE 11089, Nanoengineering: Fabrication, Properties, Optics, Thin Films, and Devices XVI, 110891X (3 September 2019); https://doi.org/10.1117/12.2529144

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KEYWORDS

Copper

Thin films

Oxides

Boron

Heterojunctions

Doping

Raman spectroscopy

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