Presentation
10 September 2019 Gate-tunable spin Hall conductivity in ultra-thin platinum (Conference Presentation)
Masashi Shiraishi, Sergey Dushenko
Author Affiliations +
Abstract
Electric gating can strongly modulate a wide variety of physical properties in semiconductors and insulators, such as significant changes of conductivity in silicon, appearance of super- conductivity in insulator [1], the paramagnet–ferromagnet transition in (In,Mn)As [2], and so on. The key to such modulation is charge accumulation in solids. Thus, it has been believed that such modulation is out of reach for conventional metals where the number of carriers is too large. However, success in tuning the Curie temperature of ultrathin cobalt gave hope of finally achieving such a degree of control even in metallic materials [3]. In this presentation, reversible modulation of up to two orders of magnitude of the inverse spin Hall effect in ultrathin platinum by ionic gating is discussed [4]. References: [1] K. Ueno et al., Nature Mater. 7, 855 (2008). [2] H. Ohno et al., Nature 408, 944 (2000). [3] D. Chiba et al., Nature Mater. 10, 853. (2011). [4] S. Dushenko, M. Shiraishi et al., Nature Commun. 9, 3118 (2018).
Conference Presentation
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Masashi Shiraishi and Sergey Dushenko "Gate-tunable spin Hall conductivity in ultra-thin platinum (Conference Presentation)", Proc. SPIE 11090, Spintronics XII, 110902J (10 September 2019); https://doi.org/10.1117/12.2527646
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KEYWORDS
Platinum

Modulation

Dielectrics

Cobalt

Metals

Semiconductors

Silicon

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