Quantum well solar cells incorporating thin barriers for improved efficiency (Conference Presentation)

Stephen J. Polly; Roger E. Welser; Mitsul Kacharia; Anastasiia Fedorenko; Ashok K. Sood; Seth M. Hubbard

doi:10.1117/12.2546778

10 March 2020 Quantum well solar cells incorporating thin barriers for improved efficiency (Conference Presentation)

Stephen J. Polly, Roger E. Welser, Mitsul Kacharia, Anastasiia Fedorenko, Ashok K. Sood, Seth M. Hubbard

Proceedings Volume 11275, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices IX; 112750O (2020) https://doi.org/10.1117/12.2546778
Event: SPIE OPTO, 2020, San Francisco, California, United States

Abstract

Strained InGaAs (In = 8%) quantum wells (QW) were inserted into the intrinsic region of n-i-p InGaP/GaAs heterojunction solar cells, with thin (1 nm to 4nm) GaAs barriers separating the QWs. This design exhibited improved carrier collection from the QWs as compared to thicker barrier designs, as well as almost no degradation in Voc from control devices without QWs. Champion devices incorporating three layers of strained InGaAs QWs exhibited conversion efficiencies of >26%, exceeding that of the control, with corresponding short circuit current of 30.22 mA/cm2 and open circuit voltage of 1.03V under 1-sun AM1.5G solar spectrum.

Conference Presentation

Citation Download Citation

Stephen J. Polly, Roger E. Welser, Mitsul Kacharia, Anastasiia Fedorenko, Ashok K. Sood, and Seth M. Hubbard "Quantum well solar cells incorporating thin barriers for improved efficiency (Conference Presentation)", Proc. SPIE 11275, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices IX, 112750O (10 March 2020); https://doi.org/10.1117/12.2546778

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