Paper
5 May 2010 Flexible solar cells for micro-autonomous systems technology
Luke F. Lester, Kai Yang, Mohamed A. El-Emawy, Therese Saiz, Ryan A. Clark, Andrew Hollowell, Olga Lavrova
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Abstract
Insensitivity to edge recombination is observed in GaAs-based InAs/InGaAs quantum dots-in-a-well (DWELL) solar cells by comparing their current-voltage (IV) plot to GaAs control samples. The edge recombination current component is extracted by analyzing devices of different areas and then compared to DWELL cells of comparable dimensions. The results demonstrate that GaAs-based solar cells incorporating a DWELL design are relatively insensitive to edge recombination by suppressing lateral diffusion of carriers in the intrinsic layer, and thus promising for applications that require small area devices such as concentration or flexible surfaces. Preliminary studies on the integration of these cells onto flexible surfaces such as Kapton and nanopaper are discussed including weight considerations for all the integrated materials.
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Luke F. Lester, Kai Yang, Mohamed A. El-Emawy, Therese Saiz, Ryan A. Clark, Andrew Hollowell, and Olga Lavrova "Flexible solar cells for micro-autonomous systems technology", Proc. SPIE 7679, Micro- and Nanotechnology Sensors, Systems, and Applications II, 76790Y (5 May 2010); https://doi.org/10.1117/12.852598
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KEYWORDS
Solar cells

Gallium arsenide

Indium arsenide

Thin film solar cells

Aluminum

Indium gallium arsenide

Quantum wells

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