Paper
21 December 1989 SiO2 Film Grown On Glass In Aqueous Solution
Hideo Kawahara, Takuji Goda, Hirotsugu Nagayama, Hisao Honda, Akihiro Hishinuma
Author Affiliations +
Proceedings Volume 1128, Glasses for Optoelectronics; (1989) https://doi.org/10.1117/12.961429
Event: 1989 International Congress on Optical Science and Engineering, 1989, Paris, France
Abstract
Si02 film deposition on a glass was made by LPD method (Liquid Phase Deposition). This process involes the deposition and growth of Si02 layer on glass surface while immersing it in hexafluorosilicic acid (H2SiF6) solution supersaturated with silica. In this study, the influence of the impurities and H2SiF6 concentration in the solution on Si02 film properties was investigated by use of SIMS, ICP, Ellipsometry,IRRS and etch rate measurement. The results showed that LPD based Si02 film composition was scarcely affected by the concentration of such impurities as Na, K and Ca contained in the solution. Furthermore it was found that higher H2SiF6 concentration led to Si02 film with lower refractive index and lower etch rate. To have proper understanding of these apparently inconsistent results, the specific role of fluorine contained in the solution and the film was discussed.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hideo Kawahara, Takuji Goda, Hirotsugu Nagayama, Hisao Honda, and Akihiro Hishinuma "SiO2 Film Grown On Glass In Aqueous Solution", Proc. SPIE 1128, Glasses for Optoelectronics, (21 December 1989); https://doi.org/10.1117/12.961429
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Cited by 2 scholarly publications.
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KEYWORDS
Silica

Refractive index

Laser phosphor displays

Etching

Fluorine

Glasses

Ions

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