Preparation of SiO2 film utilizing equilibrium reaction in aqueous solution

Hideo Kawahara; Y. Sakai; Takuji Goda; Akihiro Hishinuma; Kazuo Takemura

doi:10.1117/12.46023

1 August 1991 Preparation of SiO2 film utilizing equilibrium reaction in aqueous solution

Hideo Kawahara, Y. Sakai, Takuji Goda, Akihiro Hishinuma, Kazuo Takemura

Proceedings Volume 1513, Glasses for Optoelectronics II; (1991) https://doi.org/10.1117/12.46023
Event: ECO4 (The Hague '91), 1991, The Hague, Netherlands

Abstract

It has been reported in previous works on the LPD (liquid phase deposition) method that SiO2 film deposition could be made by utilizing the chemical transition from supersaturation to saturation in silica dissolution in H2SiF6 aqueous solution. In this study, the supersaturated state was obtained and maintained by employing the dependence of silica solubility on H2SiF6 solution temperature without a reaction initiator. As for the influence of the process parameters on SiO2 film properties, it came into notice that a dense film structure was obtained in the deposition at higher solution temperature (around 60 degree(s)C). As a result, transparent and crack-free thick SiO2 film over 10 microns was obtained by this advanced LPD method.

Citation Download Citation

Hideo Kawahara, Y. Sakai, Takuji Goda, Akihiro Hishinuma, and Kazuo Takemura "Preparation of SiO2 film utilizing equilibrium reaction in aqueous solution", Proc. SPIE 1513, Glasses for Optoelectronics II, (1 August 1991); https://doi.org/10.1117/12.46023

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