Control of vacancy-type defects in Mg implanted GaN studied by positron annihilation spectroscopy

Akira Uedono; Marcel Dickmann; Werner Egger; Christoph Hugenschmidt; Shoji Ishibashi; Shigefusa F. Chichibu

doi:10.1117/12.2541518

16 February 2020 Control of vacancy-type defects in Mg implanted GaN studied by positron annihilation spectroscopy

Akira Uedono, Marcel Dickmann, Werner Egger, Christoph Hugenschmidt, Shoji Ishibashi, Shigefusa F. Chichibu

Proceedings Volume 11280, Gallium Nitride Materials and Devices XV; 112800C (2020) https://doi.org/10.1117/12.2541518
Event: SPIE OPTO, 2020, San Francisco, California, United States

Abstract

Vacancy-type defects in Mg-implanted GaN were probed using monoenergetic positron beams. Mg⁺ ions were implanted to provide box profiles with Mg concentrations [Mg] of 10¹⁷-10¹⁹ cm-³. For as-implanted samples, the major defect species was determined to be Ga-vacancy (V_Ga) related defects such as divacancy (V_GaV_N) and/or their complexes with impurities. For Mg-implanted samples, an agglomeration of vacancies started at 800-1000°C annealing, leading to the formation of vacancy clusters such as (V_GaV_N)₃. For the sample with [Mg]=10¹⁹ cm^-3, the trapping rate of positrons to the vacancies decreased with increasing annealing temperature (≥1100°C), which was attributed to the change in the charge state of vacancy-type defects from neutral to positive (or negative to neutral) due to the activation of Mg. For Mg- and H-implanted samples, the hydrogenation of vacancy-type defects started after 800°C annealing. Comparing with the annealing behavior of defects for the samples without H-implantation, the clustering of vacancy-type defects was suppressed, which can be attributed to the interaction between Mg, H, and vacancies.

Citation Download Citation

Akira Uedono, Marcel Dickmann, Werner Egger, Christoph Hugenschmidt, Shoji Ishibashi, and Shigefusa F. Chichibu "Control of vacancy-type defects in Mg implanted GaN studied by positron annihilation spectroscopy", Proc. SPIE 11280, Gallium Nitride Materials and Devices XV, 112800C (16 February 2020); https://doi.org/10.1117/12.2541518

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