InGaN/GaN MQWs green-light photodetectors with thin GaN barrier layers

Supeng Zhang; Hongxia Wang; Hailong Wang; Hao Jiang

doi:10.1117/12.2539045

18 December 2019 InGaN/GaN MQWs green-light photodetectors with thin GaN barrier layers

Supeng Zhang, Hongxia Wang, Hailong Wang, Hao Jiang

Proceedings Volume 11334, AOPC 2019: Optoelectronic Devices and Integration; and Terahertz Technology and Applications; 1133403 (2019) https://doi.org/10.1117/12.2539045
Event: Applied Optics and Photonics China (AOPC2019), 2019, Beijing, China

Abstract

Green light InGaN photodiodes based on 21-periods In_0.31Ga_0.69N/GaN MQWs with 6-nm-thick barriers were fabricated and characterized. The fabricated devices show a spectral response cutoff of more than three orders of magnitude by 540 nm. Dark current as low as 2.65×10_-14A was measured at 5 V reverse bias. Responsivity of 69.0 mA/W was obtained at ~490 nm and -5 V bias under the back illumination condition, corresponding to an external quantum efficiency of 12.8 %.

Citation Download Citation

Supeng Zhang, Hongxia Wang, Hailong Wang, and Hao Jiang "InGaN/GaN MQWs green-light photodetectors with thin GaN barrier layers", Proc. SPIE 11334, AOPC 2019: Optoelectronic Devices and Integration; and Terahertz Technology and Applications, 1133403 (18 December 2019); https://doi.org/10.1117/12.2539045

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