Comparison of optical properties in GaN and InGaN quantum well structures

Shigefusa F. Chichibu; Amane Shikanai; Takahiro Deguchi; Akiko Setoguchi; Rikuro Nakai; Kazumi Wada; Steven P. DenBaars; Takayuki Sota; Takashi Mukai; Shuji Nakamura

doi:10.1117/12.370352

12 November 1999 Comparison of optical properties in GaN and InGaN quantum well structures

Shigefusa F. Chichibu, Amane Shikanai, Takahiro Deguchi, Akiko Setoguchi, Rikuro Nakai, Kazumi Wada, Steven P. DenBaars, Takayuki Sota, Takashi Mukai, Shuji Nakamura

Author Affiliations +

Proceedings Volume 3896, Design, Fabrication, and Characterization of Photonic Devices; (1999) https://doi.org/10.1117/12.370352
Event: International Symposium on Photonics and Applications, 1999, Singapore, Singapore

Abstract

Static, field-mounted and time-resolved spectroscopic measurements were carried out to compare the electronic structures between AlGaN/GaN binary and GaN/InGaN ternary single quantum wells (SQWs). The internal field exits across the quantum well (QW) naturally induces quantum-confined Stark effects, namely the redshift of the QW resonance energy and separation of electron-hole wavefunction overlap. Thus AlGaN/GaN SQWs exhibited a weak luminescence peak due to the presence of nonradiative channels. However, optical absorption and degenerate pump-probe measurements revealed that excitonic character still remains for the thin QWs having the well width nearly the same as the bulk free exciton Bohr radius even under high electric field as high as 0.73 MV/cm. A slightly In-alloyed InGaN SQW exhibited bright luminescence peak in spite of the pronounced effective bandgap inhomogeneity in the QW, which was confirmed by the point excitation and monochromatic cathodoluminescence mapping methods to have the lateral potential interval smaller than 40 nm. Therefore the light emitting area of the potential minima has the size defined as 'quantum-disk'. Carriers generated in the InGaN QWEs are effectively localized in these regions to form localized QW excitons exhibiting highly efficient spontaneous emissions.

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Shigefusa F. Chichibu, Amane Shikanai, Takahiro Deguchi, Akiko Setoguchi, Rikuro Nakai, Kazumi Wada, Steven P. DenBaars, Takayuki Sota, Takashi Mukai, and Shuji Nakamura "Comparison of optical properties in GaN and InGaN quantum well structures", Proc. SPIE 3896, Design, Fabrication, and Characterization of Photonic Devices, (12 November 1999); https://doi.org/10.1117/12.370352

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KEYWORDS

Quantum wells

Indium gallium nitride

Excitons

Gallium nitride

Absorption

Electroluminescence

Light emitting diodes

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