Sb-based third generation at Center for Quantum Devices

Manijeh Razeghi

doi:10.1117/12.2564813

23 April 2020 Sb-based third generation at Center for Quantum Devices

Manijeh Razeghi

Proceedings Volume 11407, Infrared Technology and Applications XLVI; 114070T (2020) https://doi.org/10.1117/12.2564813
Event: SPIE Defense + Commercial Sensing, 2020, Online Only

Abstract

Sb-based III-V semiconductors are a promising alternative to HgCdTe. They can be produced with a similar bandgap to HgCdTe, but take advantage of the strong bonding between group III and group V elements which leads to very stable materials, good radiation hardness, and high uniformity. In this paper, we will discuss the recent progress of our research and present the main contributions of the Center for Quantum Devices to the Sb-based 3th generation imagers.

Citation Download Citation

Manijeh Razeghi "Sb-based third generation at Center for Quantum Devices", Proc. SPIE 11407, Infrared Technology and Applications XLVI, 114070T (23 April 2020); https://doi.org/10.1117/12.2564813

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