High-speed InGaAs drift-enhanced photodetectors

G. Y. Li; B. Niu; Y. C. Kong; T. S. Chen

doi:10.1117/12.2565010

17 April 2020 High-speed InGaAs drift-enhanced photodetectors

G. Y. Li, B. Niu, Y. C. Kong, T. S. Chen

Proceedings Volume 11455, Sixth Symposium on Novel Optoelectronic Detection Technology and Applications; 1145551 (2020) https://doi.org/10.1117/12.2565010
Event: Sixth Symposium on Novel Photoelectronic Detection Technology and Application, 2019, Beijing, China

Abstract

We experimentally demonstrate high-speed InGaAs/InP drift-enhanced photodetectors with different diameters and absorbing layer thicknesses. For photodiodes with optical window diameters of 10 μm, 7 μm and 5 μm, we have achieved 3-dB bandwidths of 32GHz, 40 GHz and over 40 GHz from a 500-nm-thickness intrinsic InGaAs absorption layer and 30 GHz, 34 GHz and 36 GHz bandwidths from a 700-nm-thickness absorption layer, respectively. The measured values are in good agreement with the theoretical calculations.

Citation Download Citation

G. Y. Li, B. Niu, Y. C. Kong, and T. S. Chen "High-speed InGaAs drift-enhanced photodetectors", Proc. SPIE 11455, Sixth Symposium on Novel Optoelectronic Detection Technology and Applications, 1145551 (17 April 2020); https://doi.org/10.1117/12.2565010

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