Investigation and optimization of STI dry-etch induced overlay through patterned wafer geometry tool

Tsu-Wen Huang; Ying-Cheng Chuang; Hsuan-Jui Huang; Chung-Chang Liu; Hsiao-Lun Chu; Sheng-Yu Chen; Ming-Ju Li; Jun-Eu Tang; Chiou-Shoei Chee; Choon-Wai Chang; Tung-Ying Lee

doi:10.1117/12.2584589

22 February 2021 Investigation and optimization of STI dry-etch induced overlay through patterned wafer geometry tool

Tsu-Wen Huang, Ying-Cheng Chuang, Hsuan-Jui Huang, Chung-Chang Liu, Hsiao-Lun Chu, Sheng-Yu Chen, Ming-Ju Li, Jun-Eu Tang, Chiou-Shoei Chee, Choon-Wai Chang, Tung-Ying Lee

Author Affiliations +

Proceedings Volume 11611, Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV; 1161139 (2021) https://doi.org/10.1117/12.2584589
Event: SPIE Advanced Lithography, 2021, Online Only

Conference Poster

Abstract

When a novel dry-etch tool was introduced for the shallow trench isolation (STI) process, it resulted in poorer overlay performance downstream. The patterned wafer geometry (PWG™) tool was utilized to investigate the observed difference in results between the new tool and the POR tool. By using metrics representing process-induced local shape and/or stress, a post-STI oxide fill rapid thermal process (RTP) was identified as the process step where the difference between the dry-etch tools was magnified. An experiment based on RTP temperature and ramp rate was conducted and the effect was evaluated using both GEN4–a predicted shape overlay metric derived from PWG shape measurement–and overlay measurements. Both GEN4 and overlay results indicated that high RTP temperature and low ramp rate could compensate for the process effects introduced by the new etch tool. The strong correlation between GEN4 and overlay also suggested that GEN4 may be a suitable upstream predictor of process-induced overlay excursion in such a case.

Conference Presentation

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Tsu-Wen Huang, Ying-Cheng Chuang, Hsuan-Jui Huang, Chung-Chang Liu, Hsiao-Lun Chu, Sheng-Yu Chen, Ming-Ju Li, Jun-Eu Tang, Chiou-Shoei Chee, Choon-Wai Chang, and Tung-Ying Lee "Investigation and optimization of STI dry-etch induced overlay through patterned wafer geometry tool", Proc. SPIE 11611, Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV, 1161139 (22 February 2021); https://doi.org/10.1117/12.2584589

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