Innovative dual mark design for alignment verification and process monitoring in advanced lithography

Jia Hung Chang; En Chuan Lio; Junjin Lin; Tang Chun Weng; Bill Lin; Patrick Lomtscher; Martin Freitag; Stefan Buhl; Hsiao Lin Hsu; Rex H. Liu

doi:10.1117/12.2583620

22 February 2021 Innovative dual mark design for alignment verification and process monitoring in advanced lithography

Jia Hung Chang, En Chuan Lio, Junjin Lin, Tang Chun Weng, Bill Lin, Patrick Lomtscher, Martin Freitag, Stefan Buhl, Hsiao Lin Hsu, Rex H. Liu

Author Affiliations +

Proceedings Volume 11613, Optical Microlithography XXXIV; 116130K (2021) https://doi.org/10.1117/12.2583620
Event: SPIE Advanced Lithography, 2021, Online Only

Abstract

Improving on product overlay is one of the key challenges when shrinking technology nodes in semiconductor manufacturing. Using information from non-lithography process steps can unleash overlay improvement potential.1 The challenge is to find intra-wafer signatures by measuring planar distortion. Several previous applications showed that using exposure tool wafer alignment data can improve overlay performance.2 With smart placement of alignment mark pairs in the X and Y direction, it is possible to determine intra-wafer distortion wafer-by-wafer. Both the measurement and modeled results are applied directly as a feed-forward correction to enable wafer level control. In this paper, the capability to do this is evaluated in a feasibility study.

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Jia Hung Chang, En Chuan Lio, Junjin Lin, Tang Chun Weng, Bill Lin, Patrick Lomtscher, Martin Freitag, Stefan Buhl, Hsiao Lin Hsu, and Rex H. Liu "Innovative dual mark design for alignment verification and process monitoring in advanced lithography", Proc. SPIE 11613, Optical Microlithography XXXIV, 116130K (22 February 2021); https://doi.org/10.1117/12.2583620

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