Presentation + Paper
22 February 2021 Extending materials to systems co-optimizationTM (MSCOTM) modeling to memory array simulation
Ashish Pal, Plamen Asenov, El Mehdi Bazizi, Jaehyun Lee, Benjamin Colombeau, Sanjay Natarajan, Blessy Alexander, Buvna Ayyagari-Sangmalli, Victor Moroz, Xi-Wei Lin
Author Affiliations +
Abstract
In this paper, we describe a framework to enable the memory array simulations for Materials to Systems CooptimizationTM (MSCOTM) flows. The methodology is applied for projected 3 nm logic FinFET technology node SRAM array. To form the SRAM array, a “tiling” approach is utilized, where neighbor cells are created by copying and mirroring the first cell. Then this process is repeated to create the rest of the array. Electrical pulses are applied to the word-line and bit-line to activate the read and write operations. We demonstrate 128 ×128 SRAM array simulations and find that the farthest cell from the word-line driver is vulnerable.
Conference Presentation
© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ashish Pal, Plamen Asenov, El Mehdi Bazizi, Jaehyun Lee, Benjamin Colombeau, Sanjay Natarajan, Blessy Alexander, Buvna Ayyagari-Sangmalli, Victor Moroz, and Xi-Wei Lin "Extending materials to systems co-optimizationTM (MSCOTM) modeling to memory array simulation", Proc. SPIE 11614, Design-Process-Technology Co-optimization XV, 116140G (22 February 2021); https://doi.org/10.1117/12.2583923
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Systems modeling

Fin field effect transistors

Logic

Field effect transistors

Materials processing

Metals

Resistance

Back to Top