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5 March 2021 Emission wavelength control of GaInN/GaN multi-quantum shells/nanowires grown by metalorganic vapor phase epitaxy
Kazuma Ito, Weifang Lu, Naoki Sone, Yoshiya Miyamoto, Renji Okuda, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya, Isamu Akasaki
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Proceedings Volume 11686, Gallium Nitride Materials and Devices XVI; 116861L (2021) https://doi.org/10.1117/12.2578127
Event: SPIE OPTO, 2021, Online Only
Abstract
The selective-monolithic growth of coaxial GaInN/GaN NWs was investigated by changing the TEG flow rate, barrier and well growth temperature during MQS growth. In incorporation increased with a higher TEG flow rate. However, In-rich flakes were formed the NWs resulting in the deterioration of crystal quality. Using a higher growth temperature of quantum barriers, abnormal growth at the top of NWs was eliminated. As a result, the CL emission intensity was enhanced. Furthermore, the occurrence of In desorption was suppressed by decreasing the growth temperature of quantum wells. Therefore, these results are promising for NW-based white LEDs.
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Kazuma Ito, Weifang Lu, Naoki Sone, Yoshiya Miyamoto, Renji Okuda, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya, and Isamu Akasaki "Emission wavelength control of GaInN/GaN multi-quantum shells/nanowires grown by metalorganic vapor phase epitaxy", Proc. SPIE 11686, Gallium Nitride Materials and Devices XVI, 116861L (5 March 2021); https://doi.org/10.1117/12.2578127
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KEYWORDS
Nanowires
Vapor phase epitaxy
Crystals
Light emitting diodes
Scanning electron microscopy
Electron beam lithography
Electron microscopes
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