Crystal growth of n-GaN on nanowire-based light emitter including multiple-quantum-shell and tunnel junction

Yoshiya Miyamoto; Naoki Sone; Weifang Lu; Kazuma Ito; Renji Okuda; Kazuyoshi Iida; Masaki Ohya; Koji Okuno; Koichi Mizutani; Satoshi Kamiyama; Tetsuya Takeuchi; Motoaki Iwaya; Isamu Akasaki

doi:10.1117/12.2578133

6 March 2021 Crystal growth of n-GaN on nanowire-based light emitter including multiple-quantum-shell and tunnel junction

Yoshiya Miyamoto, Naoki Sone, Weifang Lu, Kazuma Ito, Renji Okuda, Kazuyoshi Iida, Masaki Ohya, Koji Okuno, Koichi Mizutani, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya, Isamu Akasaki

Author Affiliations +

Proceedings Volume 11686, Gallium Nitride Materials and Devices XVI; 116862L (2021) https://doi.org/10.1117/12.2578133
Event: SPIE OPTO, 2021, Online Only

Conference Poster

Abstract

A tunnel junction and a n-GaN cap layer grown on the multi-quantum shells (MQS) /nanowires are introduced to decrease the resistivity and optical loss. The selective-area growth of the MQS/nanowire core-shell structures on the template was performed by metalorganic vapour phase epitaxy (MOVPE). Further, the MQS structure was covered with the tunnel junction and the n-GaN cap layer. Here, the growth conditions of the n-GaN cap layer were systemically investigated. The effect of p-GaN shape on the morphology of grown n-GaN cap layer was also assessed.

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Yoshiya Miyamoto, Naoki Sone, Weifang Lu, Kazuma Ito, Renji Okuda, Kazuyoshi Iida, Masaki Ohya, Koji Okuno, Koichi Mizutani, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya, and Isamu Akasaki "Crystal growth of n-GaN on nanowire-based light emitter including multiple-quantum-shell and tunnel junction", Proc. SPIE 11686, Gallium Nitride Materials and Devices XVI, 116862L (6 March 2021); https://doi.org/10.1117/12.2578133

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