Poster + Presentation
6 March 2021 Effects of size on the electrical and optical properties of InGaN-based red light-emitting diodes
Zhe Zhuang, Daisuke Iida, Kazuhiro Ohkawa
Author Affiliations +
Conference Poster
Abstract
This work found larger red chips exhibited lower forward voltages due to their lower series resistance originated from the device area. Moreover, a larger chip resulted in a longer emission wavelength, narrower full-width at half maximum (FWHM), and higher EQE at high currents. These characteristics are beneficial for InGaN-based red LEDs. On the other hand, smaller chips had merits of a high characteristic temperature of 399K. This characteristic temperature is almost similar level with the world record in AlGaInP-based red LEDs, suggesting that InGaN-based red LEDs with small chip sizes are good candidates for temperature tolerant lighting applications.
Conference Presentation
© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zhe Zhuang, Daisuke Iida, and Kazuhiro Ohkawa "Effects of size on the electrical and optical properties of InGaN-based red light-emitting diodes", Proc. SPIE 11686, Gallium Nitride Materials and Devices XVI, 116862H (6 March 2021); https://doi.org/10.1117/12.2577244
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KEYWORDS
Light emitting diodes

External quantum efficiency

Optical properties

Electroluminescence

Light sources and illumination

Blue light emitting diodes

Semiconducting wafers

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