In this talk, I will give an overview of our research efforts on developing InP/InAsP nanowire (NW) heterostructure photodetectors for NIR-LWIR detection. I will discuss design, modeling, growth, device processing and optoelectronic properties of both single NW devices and large square millimeter devices comprising millions of NWs connected in parallel. The developed device family includes p-i-n and SAM avalanche diodes, as well as state-of-the-art photoconductors with embedded quantum discs. I will discuss a newly developed model that unravels the high, non-linear optical gain observed in photoconductors that stems from complex carrier dynamics involving multiple traps on the surface of the NWs. I will also briefly introduce our recently initiated efforts on realizing bias-tunable detectors with NW arrays embedded in designed photonic crystals for spectral tuning of optical modes.
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