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1 August 2021 Asymmetric scattering and tunneling of electrons due to spin-orbit and exchange interaction
Igor Rozhansky, Konstantin Denisov, Mikhail Rakitskii, Nikita Averkiev, Henri Jaffres, Henri-Jean Drouhin
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Proceedings Volume 11805, Spintronics XIV; 1180514 (2021) https://doi.org/10.1117/12.2595571
Event: SPIE Nanoscience + Engineering, 2021, San Diego, California, United States
Abstract
We consider a transverse electrical and spin current response to a longitudinal electric field in a metallic or semiconductor system characterized by various types of chirality. Using the similar theoretical approach we study a skew scattering on magnetic skyrmions leading to topological Hall effect, tunneling anomalous Hall effect (TAHE) of electrons and holes across an interface between magnetic semiconductors and electron scattering on a magnetic center in a semiconductor. We demonstrate how the chiral symmetry of the system manifests itself in the Hall response and its dependence on the electron spin polarization.
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Igor Rozhansky, Konstantin Denisov, Mikhail Rakitskii, Nikita Averkiev, Henri Jaffres, and Henri-Jean Drouhin "Asymmetric scattering and tunneling of electrons due to spin-orbit and exchange interaction", Proc. SPIE 11805, Spintronics XIV, 1180514 (1 August 2021); https://doi.org/10.1117/12.2595571
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KEYWORDS
Scattering
Electrons
Magnetism
Heterojunctions
Magnetic semiconductors
Semiconductors
Group III-V semiconductors
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