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1 August 2021 Disentangling bulk and interface phenomena in a molecularly doped polymer semiconductor
Dominique Lungwitz, Thorsten Schultz, Claudia E. Tait, Jan Behrends, Swagat Mohapatra, Stephen Barlow, Seth R. Marder, Andreas Opitz, Norbert Koch
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Proceedings Volume 11809, Organic, Hybrid, and Perovskite Photovoltaics XXII; 1180909 (2021) https://doi.org/10.1117/12.2593646
Event: SPIE Organic Photonics + Electronics, 2021, San Diego, California, United States
Abstract
Molecular electrical doping is of central technological relevance for organic (opto-) electronics since it allows control of charge carrier density and Fermi level position in organic semiconductors (OSCs). Here, we chose to investigate the doping capability of the n-dopant 1,2,3,4,1′,2′,3′,4′-octaphenylrhodocene (OPR). Using the bulky, strongly reducing metallocene to dope the electron-transport polymer poly{[N,N-bis(2-octyldodecyl)naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5’-(2,2’-bithiophene)} [P(NDI2OD-T2)] leads to an increased bulk conductivity and decreased contact resistance. While the former is due to low-level n-doping of the polymer, trap filling and concomitant charge carrier mobility increase, the latter is caused by an accumulation of OPR at an indium tin oxide (ITO) substrate.
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Dominique Lungwitz, Thorsten Schultz, Claudia E. Tait, Jan Behrends, Swagat Mohapatra, Stephen Barlow, Seth R. Marder, Andreas Opitz, and Norbert Koch "Disentangling bulk and interface phenomena in a molecularly doped polymer semiconductor", Proc. SPIE 11809, Organic, Hybrid, and Perovskite Photovoltaics XXII, 1180909 (1 August 2021); https://doi.org/10.1117/12.2593646
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KEYWORDS
Doping
Polymers
Semiconductors
Interfaces
Electrodes
N-type semiconductors
Organic semiconductors
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