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1 October 2021 Statistical analysis of the impact of 2D reticle variability on wafer variability in advanced EUV nodes using large-scale Monte Carlo simulations
Luke T. Long, Adam Lyons, Tom Wallow
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Proceedings Volume 11855, Photomask Technology 2021; 1185513 (2021) https://doi.org/10.1117/12.2598992
Event: SPIE Photomask Technology + EUV Lithography, 2021, Online Only
Abstract
In this paper, we present a simulation analysis of the impact of reticle pattern roughness and its impact on future mask design. To that end, we examine the role of reticle roughness on EPE, ILS, and the resulting process window for a series of 2D N3 and N2 features. The nominal masks studied were the result of four different flavors of OPC: Manhattan and freeform, with and without SRAFs, with the stated goal of uncovering how reticle roughness may impact the choice of reticle design and fabrication. Fourteen different patterns were simulated for each OPC mask design, with 105 -106 features for each pattern. The selected patterns comprise a range of CDs from 20 to 60 nm, at pitches in the range of 36 to 135 nm. Reticle variability was injected using a Monte Carlo approach, in which the injected roughness is parameterized by correlation length and amplitude derived empirically from a mask available to us. Carrying out simulations in this way allows us to measure variability distributions and their low-probability impacts at approximately a 5-sigma level. Our preliminary results suggest that both SRAFs and freeform mask design, particularly in concert, offer improved robustness to reticle variability.
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Luke T. Long, Adam Lyons, and Tom Wallow "Statistical analysis of the impact of 2D reticle variability on wafer variability in advanced EUV nodes using large-scale Monte Carlo simulations", Proc. SPIE 11855, Photomask Technology 2021, 1185513 (1 October 2021); https://doi.org/10.1117/12.2598992
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KEYWORDS
Reticles
Monte Carlo methods
Photomasks
Statistical analysis
Extreme ultraviolet
Semiconducting wafers
Optical proximity correction
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