Research on the growth and application of silicon carbide in China

Yang Cui

doi:10.1117/12.2641064

29 April 2022 Research on the growth and application of silicon carbide in China

Yang Cui

Proceedings Volume 12255, 2022 International Conference on Optoelectronic Information and Functional Materials (OIFM 2022); 122551F (2022) https://doi.org/10.1117/12.2641064
Event: 2022 International Conference on Optoelectronic Information and Functional Materials (OIFM 2022), 2022, Chongqing, China

Abstract

Silicon carbide (SiC) has a large band gap width, high breakdown electric field, high thermal conductivity, high electron saturation rate, and high radiation resistance. The SiC-based devices not only work stably at high temperatures but also have good reliability at high voltages and high frequencies. SiC has been used in aerospace, optical mirrors, and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs). This paper introduced the growth of SiC single crystals and substrate epitaxy as well as applied research and discusses its application range.

Citation Download Citation

Yang Cui "Research on the growth and application of silicon carbide in China", Proc. SPIE 12255, 2022 International Conference on Optoelectronic Information and Functional Materials (OIFM 2022), 122551F (29 April 2022); https://doi.org/10.1117/12.2641064

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