Technical study on production of high power transistor

Fang Yang; Jinliang Lin

doi:10.1117/12.2645530

30 August 2022 Technical study on production of high power transistor

Fang Yang, Jinliang Lin

Proceedings Volume 12309, International Conference on Advanced Manufacturing Technology and Manufacturing Systems (ICAMTMS 2022); 123090K (2022) https://doi.org/10.1117/12.2645530
Event: International Conference on Advanced Manufacturing Technology and Manufacturing System (ICAMTMS 2022), 2022, Shijiazhuang, China

Abstract

The high power transistor is an important component of the power driving circuits, which is usually worked under critical parameters. In this paper, the studied on manufacturing process of the base diffusion and emission diffusion have been proposed, which mainly focuses on parameter requirements of a special high power transistor. And the parameters of base diffusion and emission diffusion has been determined.

Citation Download Citation

Fang Yang and Jinliang Lin "Technical study on production of high power transistor", Proc. SPIE 12309, International Conference on Advanced Manufacturing Technology and Manufacturing Systems (ICAMTMS 2022), 123090K (30 August 2022); https://doi.org/10.1117/12.2645530

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