Paper
14 October 2022 Mask optimization method based on residual network
Author Affiliations +
Proceedings Volume 12343, 2nd International Conference on Laser, Optics and Optoelectronic Technology (LOPET 2022); 1234332 (2022) https://doi.org/10.1117/12.2649554
Event: 2nd International Conference on Laser, Optics and Optoelectronic Technology (LOPET 2022), 2022, Qingdao, China
Abstract
With the development of the integrated circuit manufacturing process, the critical dimension of optical lithography is reduced. Due to the optical diffraction effect, the influence of the distortion of the lithography output pattern on the integrated circuit is gradually increasing. Mask optimization in lithography is a very critical issue. In this paper, a residual network-based mask optimization method is proposed. Using the optimization masks generated by the traditional gradient descent method and its corresponding initial input masks as the training set, the residual network is trained by the inverse lithography optimization process. The parameters of the residual network weight layer are optimized. The optimized results are projected in the forward lithography model to obtain an exposure pattern of the wafer. Compared with the traditional gradient descent method, this method can improve the calculation efficiency and realize the distortion correction of the images generated by lithography.
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zainan Xiao, Shuang Xu, and Zhiqiang Chen "Mask optimization method based on residual network", Proc. SPIE 12343, 2nd International Conference on Laser, Optics and Optoelectronic Technology (LOPET 2022), 1234332 (14 October 2022); https://doi.org/10.1117/12.2649554
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KEYWORDS
Photomasks

Lithography

Source mask optimization

Optics manufacturing

Semiconducting wafers

Optical proximity correction

Convolution

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