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15 June 2023 Recent progress in GaSb-based infrared photodetector epitaxy at IQE
Amy W. Liu, Dmitri Lubyshev, Scott A. Nelson, Michael Kattner, Phillip Frey, Joel M. Fastenau, Scott Cramb, Wayne Lewis, Will Black, Dennis E. Szymanski, Mark J. Furlong
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Proceedings Volume 12534, Infrared Technology and Applications XLIX; 125340O (2023) https://doi.org/10.1117/12.2665015
Event: SPIE Defense + Commercial Sensing, 2023, Orlando, Florida, United States
Abstract
Building on our previous efforts, IQE will demonstrate the high-volume manufacturability of our MBE growth process for GaSb-based MW and LW infrared photodetectors (IRPDs) structures. This work focuses on the ability to scale across multiple MBE reactor platforms and across multiple production sites. Supporting the scaling of FPAs requires the ability to grow IRPD structures on larger diameter substrates with good wafer-to-wafer and cross-platen uniformity. Enhancement of Ga-free LWIR QE may be realized through metamorphic growths and the use of high-index substrates. We have also extended our heteroepitaxial growth effort on Si substrate from bulk InAsSb to Sb T2SL MWIR structures.
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Amy W. Liu, Dmitri Lubyshev, Scott A. Nelson, Michael Kattner, Phillip Frey, Joel M. Fastenau, Scott Cramb, Wayne Lewis, Will Black, Dennis E. Szymanski, and Mark J. Furlong "Recent progress in GaSb-based infrared photodetector epitaxy at IQE", Proc. SPIE 12534, Infrared Technology and Applications XLIX, 125340O (15 June 2023); https://doi.org/10.1117/12.2665015
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KEYWORDS
Photodetectors
Epitaxy
Infrared photography
Infrared radiation
Mid-IR
Quantum efficiency
Semiconducting wafers
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