Mr. Phillip Frey Profile

Phillip Frey

at IQE Inc

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Author

Publications (8)

Proceedings Article | 15 June 2023 Presentation

Recent progress in GaSb-based infrared photodetector epitaxy at IQE

Amy Liu, Dmitri Lubyshev, Scott Nelson, Michael Kattner, Phillip Frey, Joel Fastenau, Scott Cramb, Wayne Lewis, Will Black, Dennis Szymanski, Mark Furlong

Proceedings Volume 12534, 125340O (2023) https://doi.org/10.1117/12.2665015

KEYWORDS: Photodetectors, Epitaxy, Infrared radiation, Infrared photography, Quantum efficiency, Mid-IR, Silicon, Semiconducting wafers, Quantum wells, Mercury cadmium telluride

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Proceedings Article | 27 May 2022 Presentation + Paper

Progress in MBE production of GaSb-based infrared photodetector epiwafers at IQE PA and NC facilities

Joel Fastenau, Dmitri Lubyshev, Seokjae Chung, Scott Nelson, Michael Kattner, Phillip Frey, Will Black, Xiao-Ming Fang, Dennis Szymanski, Amy W. Liu, Mark Furlong

Proceedings Volume 12107, 121070Z (2022) https://doi.org/10.1117/12.2620738

KEYWORDS: Semiconducting wafers, Mid-IR, Photodetectors, Quantum efficiency, Diodes, Sensors, Epitaxy, Process control

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Proceedings Article | 5 March 2022 Presentation

Maturation of InP- and GaSb-based epitaxial technologies for photonics applications

Amy W. K. Liu, Jeng Shiuh Cheong, Joel Fastenau, Matthew Fetters, Phillip Frey, Manori Gunasekera, Michael Kattner, Hubert Krysiak, Dmitri Lubyshev, Mark Mattingley, Scott Nelson, Dennis Szymanski, Mark Furlong

Proceedings Volume PC12009, PC1200916 (2022) https://doi.org/10.1117/12.2622378

KEYWORDS: Photonics, Semiconducting wafers, Photonic devices, Manufacturing, Infrared detectors, X-ray diffraction, Vapor phase epitaxy, Sensors, Molecular beam epitaxy, Metalorganic chemical vapor deposition

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Proceedings Article | 12 April 2021 Presentation + Paper

Volume MBE production trends for GaSb-based IR photodetector structures

Scott Nelson, Joel Fasteneau, Dmitri Lubyshev, Michael Kattner, Philip Frey, Amy W. Liu, Mark Furlong

Proceedings Volume 11741, 1174111 (2021) https://doi.org/10.1117/12.2591833

KEYWORDS: Photodetectors, Yield improvement, Quantum efficiency, Mid-IR, Manufacturing, Gallium antimonide, X-ray diffraction, Process control, Molecular beam epitaxy, Luminescence

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Proceedings Article | 19 May 2020 Presentation + Paper

Large format multi-wafer production of LWIR photodetector structures on 150mm GaSb substrates by MBE

S. Nelson, J. Fastenau, D. Lubyshev, M. Kattner, P. Frey, A. W. Liu, B. Martinez, M. Furlong

Proceedings Volume 11407, 114070F (2020) https://doi.org/10.1117/12.2559403

KEYWORDS: Gallium antimonide, Semiconducting wafers, Long wavelength infrared, Photodetectors, Quantum efficiency, Epitaxy, Superlattices, Sensors, Mid-IR

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Proceedings Article | 7 May 2019 Paper

GaSb-based infrared photodetector structures grown on Ge-Si substrates via metamorphic buffers

Joel Fastenau, Dmitri Lubyshev, Scott Nelson, Michael Kattner, Phillip Frey, Matt Fetters, Joe Zeng, Amy W. Liu, Aled Morgan, Stuart Edwards, Rich Dennis, Kim Beech, Doug Burrows, Kelly Patnaude, Ross Faska, Jason Bundas, Axel Reisinger, Mani Sundaram, Mark Furlong

Proceedings Volume 11002, 110020M (2019) https://doi.org/10.1117/12.2521055

KEYWORDS: Gallium antimonide, Gallium arsenide, Silicon, Photodetectors, Semiconducting wafers, Quantum efficiency, Germanium

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Proceedings Article | 7 May 2019 Presentation + Paper

T2SL mid- and long-wave infrared photodetector structures grown on (211)B and (311)A GaSb substrates

Dmitri Lubyshev, Joel Fastenau, Michael Kattner, Phillip Frey, Scott Nelson, Amy W. Liu, Becky Martinez, Mark Furlong

Proceedings Volume 11002, 110020N (2019) https://doi.org/10.1117/12.2521066

KEYWORDS: Long wavelength infrared, Quantum efficiency, Photodetectors, Gallium antimonide, Diodes, Mid-IR, Semiconducting wafers, Absorption

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Proceedings Article | 16 May 2017 Presentation + Paper

Large-format multi-wafer production of 5" GaSb-based photodetectors by molecular beam epitaxy

Dmitri Loubychev, Joel Fastenau, Michael Kattner, Phillip Frey, Amy W. Liu, Mark Furlong

Proceedings Volume 10177, 1017718 (2017) https://doi.org/10.1117/12.2263962

KEYWORDS: Gallium antimonide, Sensors, Photodetectors, Molecular beam epitaxy, Mid-IR, Semiconducting wafers, Diodes, Manufacturing, Quantum efficiency, Standards development

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Showing 5 of 8 publications

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