Progress in MBE production of GaSb-based infrared photodetector epiwafers at IQE PA and NC facilities

Joel M. Fastenau; Dmitri Lubyshev; Seokjae Chung; Scott A. Nelson; Michael Kattner; Phillip Frey; Will Black; Xiao-Ming Fang; Dennis E. Szymanski; Amy W. K. Liu; Mark J. Furlong

doi:10.1117/12.2620738

27 May 2022 Progress in MBE production of GaSb-based infrared photodetector epiwafers at IQE PA and NC facilities

Joel M. Fastenau, Dmitri Lubyshev, Seokjae Chung, Scott A. Nelson, Michael Kattner, Phillip Frey, Will Black, Xiao-Ming Fang, Dennis E. Szymanski, Amy W. K. Liu, Mark J. Furlong

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Proceedings Volume 12107, Infrared Technology and Applications XLVIII; 121070Z (2022) https://doi.org/10.1117/12.2620738
Event: SPIE Defense + Commercial Sensing, 2022, Orlando, Florida, United States

Abstract

In recent years GaSb-based infrared (IR) photodetector technology has continued to mature, moving from research and development to production-scale manufacturing for a variety of applications. In parallel, maturation of molecular beam epitaxial (MBE) growth of MWIR and LWIR photodetectors has allowed for the ramp to production volumes. Recent developments at IQE have shown that our epitaxial process is not only transferrable to production-scale reactors at the same manufacturing site, but to reactors across IQE production sites. Following the demand for larger focal plane arrays (FPAs), IQE has demonstrated high quality epitaxy grown on GaSb substrates measuring 76.2 mm to 150 mm (3” to 6”) diameter without sacrificing cross-wafer uniformity. IQE’s ability to ramp this process to a production-scale MBE, allowing for 9100 mm wafers per run, has resulted in increased throughput, volume, and yield. The surface morphology of these materials will be measured by Surfscan, AFM, and Nomarski optical microscope; the crystalline properties evaluated via HRXRD; and, using large-area mesa diodes, device performance (dark current, QE, and cutoff wavelength) will be analyzed. Using the same material and device characterization techniques, we will assess the wafer-to-wafer cross-platen uniformity, imperative for high-yield production. Through material and device characterization of each production run, IQE is able to implement statistical process control techniques to improve consistency, yield, and throughput. This will demonstrate the production readiness of IQE’s IR epitaxy.

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Joel M. Fastenau, Dmitri Lubyshev, Seokjae Chung, Scott A. Nelson, Michael Kattner, Phillip Frey, Will Black, Xiao-Ming Fang, Dennis E. Szymanski, Amy W. K. Liu, and Mark J. Furlong "Progress in MBE production of GaSb-based infrared photodetector epiwafers at IQE PA and NC facilities", Proc. SPIE 12107, Infrared Technology and Applications XLVIII, 121070Z (27 May 2022); https://doi.org/10.1117/12.2620738

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