Paper
1 June 1990 Time dependence of PEB effects
Yuichiro Yanagishita, Kazumasa Shigematsu, Kimio Yanagida
Author Affiliations +
Abstract
Though simulations of PEB (Post Exposure Bake) on the basis of PAC diffusion mode! have been carried out by a number of researchers '' (2) , it has never been confirmed that those could predict experimental data caused by PEB' s effects accurately . Because no details of chemical reactions thernlly induced by PEB are known, fundamental parameters which determine PEB' s effects must be obtained experimentally. We have acquired the volume of changes of development rate function, RATE(M) by PEB with DRM monitoring for some types of photoresist . The values of diffusion length have been obtained by means of compareing experimental B (exposure ener) vs T (development time to clear) curves with simulated ones which is based on RATEOA) data. Their dependence on the baking time has been investigated with fixed FEB temperature and it has been proved that a progress of the diffusion saturates only in less than a few seconds when the diffusion length is about lO'-l5ncn, which is much shorter than the standing wave length(= 66nm, for G-line). Profiles of low contrast resist patterns can be improved by the decrease in development rate of slightly exposed areas by PEB. The effects on these resists depend on the baking time because the volume of the decrease grows with increasing FEB time. On the other hands, for high contrast resists PEB' s diffusion enhances their resolution while the decreases in development rate have little effect on them. Time dependence cannot be observed for these resists because the diffusion length remains constant with increasing FEB time.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yuichiro Yanagishita, Kazumasa Shigematsu, and Kimio Yanagida "Time dependence of PEB effects", Proc. SPIE 1261, Integrated Circuit Metrology, Inspection, and Process Control IV, (1 June 1990); https://doi.org/10.1117/12.20060
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KEYWORDS
Diffusion

Inspection

Metrology

Process control

Integrated circuits

Picture Archiving and Communication System

Time metrology

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