Rf-diode sputtered electrochromic nickel oxide films

Michael G. Hutchins; Graham McMeeking; Xingfang Hu

doi:10.1117/12.20440

1 August 1990 Rf-diode sputtered electrochromic nickel oxide films

Michael G. Hutchins, Graham McMeeking, Xingfang Hu

Proceedings Volume 1272, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion IX; (1990) https://doi.org/10.1117/12.20440
Event: The International Congress on Optical Science and Engineering, 1990, The Hague, Netherlands

Abstract

Nickel oxide films, formed by reactive sputtering from a metallic nickel target in argonoxygen atmospheres using an rf diode configuration, show good electrochromic properties when produced at low power densities and high pressures. These results contrast with poorer electrochromic properties observed for films produced under conditions of higher power densities and lower pressures. The optimum conditions result in neutral, grey nickel oxide films which are readily bleached and completely reversible. When deposited on Sn02:F coated glass these films can have a solar transmittance of 0.70 in the bleached state and 0.30 in the coloured state. TEM studies have identified the films to be composed of cubic NiO with grain sizes in the range 2-5 nm.

Citation Download Citation

Michael G. Hutchins, Graham McMeeking, and Xingfang Hu "Rf-diode sputtered electrochromic nickel oxide films", Proc. SPIE 1272, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion IX, (1 August 1990); https://doi.org/10.1117/12.20440

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