Presentation
13 March 2024 Impact of electrical injection on PCSELs by utilizing different electrode designs
Author Affiliations +
Proceedings Volume 12867, High-Power Diode Laser Technology XXII; 1286710 (2024) https://doi.org/10.1117/12.3002447
Event: SPIE LASE, 2024, San Francisco, California, United States
Abstract
We report a selective injection design for GaAs-based Photonic-Crystal Surface-Emitting Lasers (PCSELs). COMSOL and FDTD simulations are carried out to design the injection electrode size to achieve largest gain overlapping factors with optical mode and lowest gain threshold. The PCSEL devices are fabricated with GaAs-based Multiple Quantum Well (MQW) wafer. Devices with surface area of 250×250 μm2 are fabricated with different injection electrode sizes. Testing results show that the best beam properties and an output power of 750 mW were achieved with a 150 μm p-electrode design, demonstrating selective injection impact to PCSEL beam profile.
Conference Presentation
© (2024) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chhabindra Gautam, Mingsen Pan, Subhashree Seth, Thomas Rotter, Ming Zhou, Ricky Gibson, Bradley Thompson, Shanhui Fan, Ganesh Balakrishnan, and Weidong Zhou "Impact of electrical injection on PCSELs by utilizing different electrode designs", Proc. SPIE 12867, High-Power Diode Laser Technology XXII, 1286710 (13 March 2024); https://doi.org/10.1117/12.3002447
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KEYWORDS
Electrodes

Semiconductor lasers

Photonic crystals

Laser applications

Light sources

Materials processing

Materials properties

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