Chhabindra Gautam,1 Mingsen Pan,1,2 Subhashree Seth,3 Thomas Rotter,3 Ming Zhou,4 Ricky Gibson,5 Bradley Thompson,5 Shanhui Fan,4 Ganesh Balakrishnanhttps://orcid.org/0000-0002-9073-3739,3 Weidong Zhou1
1The Univ. of Texas at Arlington (United States) 2Semergytech Inc. (United States) 3The Univ. of New Mexico (United States) 4Stanford Univ. (United States) 5Air Force Research Lab. (United States)
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We report a selective injection design for GaAs-based Photonic-Crystal Surface-Emitting Lasers (PCSELs). COMSOL and FDTD simulations are carried out to design the injection electrode size to achieve largest gain overlapping factors with optical mode and lowest gain threshold. The PCSEL devices are fabricated with GaAs-based Multiple Quantum Well (MQW) wafer. Devices with surface area of 250×250 μm2 are fabricated with different injection electrode sizes. Testing results show that the best beam properties and an output power of 750 mW were achieved with a 150 μm p-electrode design, demonstrating selective injection impact to PCSEL beam profile.
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