Advancements in MOCVD technology for low cost high quality epitaxy

J. Holzwarth; I. Miccoli; A. R. Boyd; T. Korst; M. Heuken

doi:10.1117/12.3000724

13 March 2024 Advancements in MOCVD technology for low cost high quality epitaxy

J. Holzwarth, I. Miccoli, A. R. Boyd, T. Korst, M. Heuken

Proceedings Volume 12906, Light-Emitting Devices, Materials, and Applications XXVIII; 1290607 (2024) https://doi.org/10.1117/12.3000724
Event: SPIE OPTO, 2024, San Francisco, California, United States

Abstract

Metal-Organic Chemical Vapor Deposition (MOCVD) is today the preferred methodology for the epitaxial growth of AsP based semiconductor compounds which form the basis of multitude of optoelectronic devices. For high volume manufacturing (HVM) the epitaxy of these high-performance structures is required with high yield and low cost of ownership. In this paper, groundbreaking production technology developments based on the Planetary Reactor® technology will be introduced. Reactor geometry, in particular inlet geometry has been redesigned with the introduction of novel 4-fold injector, which proves to be a key component to enable the epitaxial growth on GaAs/Ge substrates up 200 mm, delivering in-wafer uniformities and precursor efficiencies comparable to those achieved on smaller substrate diameters. Full cassette-to-cassette wafer automation in combination with In-situ chamber clean delivers low defect levels and unmatchable reproducibility in addition to higher throughput. Uniformity, tunability and reproducibility results will be thus presented for two prototypical case scenarios: VCSEL on Ge and Micro LED on GaAs to corroborate Reactor flexibility in meeting industry requirements for next device generation.

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

J. Holzwarth, I. Miccoli, A. R. Boyd, T. Korst, and M. Heuken "Advancements in MOCVD technology for low cost high quality epitaxy", Proc. SPIE 12906, Light-Emitting Devices, Materials, and Applications XXVIII, 1290607 (13 March 2024); https://doi.org/10.1117/12.3000724

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