Study of EUV stochastic defect on wafer yield

Yi-Pei Tsai; Chieh-Miao Chang; Yi-Han Chang; Apoorva Oak; Darko Trivkovic; Ryoung-Han Kim

doi:10.1117/12.3010858

10 April 2024 Study of EUV stochastic defect on wafer yield

Yi-Pei Tsai, Chieh-Miao Chang, Yi-Han Chang, Apoorva Oak, Darko Trivkovic, Ryoung-Han Kim

Proceedings Volume 12954, DTCO and Computational Patterning III; 1295404 (2024) https://doi.org/10.1117/12.3010858
Event: SPIE Advanced Lithography + Patterning, 2024, San Jose, California, United States

Abstract

As semiconductor industry transitions to EUV lithography in advanced technology nodes, EUV stochastic defects play a significant role in chip yield degradation. Present yield models do not account for the stochastic-driven defects that changes by both pitches and critical dimensions (CD) in EUV lithography. In this study, a novel approach that incorporates EUV stochastics into the yield modeling, using calibrated stochastic defects from wafer data is introduced. Then a comparative analysis of yield for various EUV insertion scenarios is meticulously performed. Additionally, strategies to enhance yield in EUV lithography, including CD retargeting are proposed.

Conference Presentation

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Yi-Pei Tsai, Chieh-Miao Chang, Yi-Han Chang, Apoorva Oak, Darko Trivkovic, and Ryoung-Han Kim "Study of EUV stochastic defect on wafer yield", Proc. SPIE 12954, DTCO and Computational Patterning III, 1295404 (10 April 2024); https://doi.org/10.1117/12.3010858

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