Comparison of MESFET and HEMT MMIC technologies using a compact Kaband voltage-controlled oscillator

Stan E. Swirhun; John J. Geddes; Vladimir Sokolov; David R. Bosch; M. J. Gawronski; Robert Anholt

doi:10.1117/12.44508

1 July 1991 Comparison of MESFET and HEMT MMIC technologies using a compact Kaband voltage-controlled oscillator

Stan E. Swirhun, John J. Geddes, Vladimir Sokolov, David R. Bosch, M. J. Gawronski, Robert Anholt

Proceedings Volume 1475, Monolithic Microwave Integrated Circuits for Sensors, Radar, and Communications Systems; (1991) https://doi.org/10.1117/12.44508
Event: Orlando '91, 1991, Orlando, FL, United States

Abstract

To compare the capability of MESFET and HEMT technologies for monolithic microwave integrated circuit (MMIC) implementation we have fabricated and tested discrete field-effect transistors (FETs) and a novel Ka-band monolithic voltage controlled oscillator (VCO). We implemented the circuit with three different active devices: moderate- and high-doped ion-implanted MESFETs (metal-semiconductor FETs) and AlGaAs/GaAs HEMTs (high electron mobility transistors). A comparison of the measured oscillator phase-noise and an independent comparison of the temperature dependence of MESFET and HEMT RF equivalent circuits yields two general guidelines: MESFETs are preferred over HEMTs for applications requiring low phase-noise and temperature insensitive operation.

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Stan E. Swirhun, John J. Geddes, Vladimir Sokolov, David R. Bosch, M. J. Gawronski, and Robert Anholt "Comparison of MESFET and HEMT MMIC technologies using a compact Kaband voltage-controlled oscillator", Proc. SPIE 1475, Monolithic Microwave Integrated Circuits for Sensors, Radar, and Communications Systems, (1 July 1991); https://doi.org/10.1117/12.44508

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