Paper
1 February 1992 Properties of GaAs : V Grown by Liquid Phase Epitaxy
Sathya Balasubramanian, Vikram Kumar
Author Affiliations +
Proceedings Volume 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits; (1992) https://doi.org/10.1117/12.634083
Event: Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, 1992, Madras, India
Abstract
Vanadium doping of GaAs during LPE growth gives rise to an electron trap with an activation energy of 0.19 eV and capture cross section of 4 x 1Ocrn.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sathya Balasubramanian and Vikram Kumar "Properties of GaAs : V Grown by Liquid Phase Epitaxy", Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); https://doi.org/10.1117/12.634083
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KEYWORDS
Vanadium

Gallium arsenide

Liquid phase epitaxy

Doping

Crystals

Arsenic

Chromium

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