Dependence Of Subband Energies Of Electron And Hole In Si-Nipi S.L. On The Design Parameters

E. G. Wang; H. L. Huang

doi:10.1117/12.940852

11 August 1987 Dependence Of Subband Energies Of Electron And Hole In Si-Nipi S.L. On The Design Parameters

E. G. Wang, H. L. Huang

Proceedings Volume 0792, Quantum Well and Superlattice Physics; (1987) https://doi.org/10.1117/12.940852
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States

Abstract

The results for tower energy-Level splittings and Fermi energy are given for (100),(110),(111) oriented Si-nipi material. Under the assumption of dn < (=dp) < d1 and dn (=dp) < d1 the paper has generally studied the dependence of subband energies of electron and hole in this material on dopant concentration, dopant layer thickness and free carrier concentration. The results in the two cases are compared with each other.

Citation Download Citation

E. G. Wang and H. L. Huang "Dependence Of Subband Energies Of Electron And Hole In Si-Nipi S.L. On The Design Parameters", Proc. SPIE 0792, Quantum Well and Superlattice Physics, (11 August 1987); https://doi.org/10.1117/12.940852

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available