Composition dependence of the dry etching of MOCVD-grown AlxGa1-xAs

Graciela R. Guel; Christian F. Schaus; Kevin J. Malloy

doi:10.1117/12.59175

26 June 1992 Composition dependence of the dry etching of MOCVD-grown Al_xGa_1-xAs

Graciela R. Guel, Christian F. Schaus, Kevin J. Malloy

Proceedings Volume 1634, Laser Diode Technology and Applications IV; (1992) https://doi.org/10.1117/12.59175
Event: OE/LASE '92, 1992, Los Angeles, CA, United States

Abstract

Ar⁺ ion milling of A1_xGa_1-xAs layers grown by Low Pressure MOCVD, with aluminum compositions from 10 to 80% and for ion energies from 300to 1200 eV is reported in this work. The etch rate decreases with Al composition and increases with ion energy. The ion milling rate was found to depend exponentially on the ion energy, with an activation energy of 0.02 eV. Results are compared with the milling of a GaAs control sample and device layers etched under similar conditions. Etching was also studied as a function of ion angle-of-incidence.

Citation Download Citation

Graciela R. Guel, Christian F. Schaus, and Kevin J. Malloy "Composition dependence of the dry etching of MOCVD-grown Al_xGa_1-xAs", Proc. SPIE 1634, Laser Diode Technology and Applications IV, (26 June 1992); https://doi.org/10.1117/12.59175

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