Low-temperature characterization of high-current-gain AlGaAs/GaAs narrow-base heterojunction bipolar transistor

Kiki Ikossi-Anastasiou; Andris Ezis; Keith Evans; Charles Ed Stutz

doi:10.1117/12.137715

3 September 1992 Low-temperature characterization of high-current-gain AlGaAs/GaAs narrow-base heterojunction bipolar transistor

Kiki Ikossi-Anastasiou, Andris Ezis, Keith Evans, Charles Ed Stutz

Author Affiliations +

Proceedings Volume 1680, High-Speed Electronics and Optoelectronics; (1992) https://doi.org/10.1117/12.137715
Event: Semiconductors '92, 1992, Somerset, NJ, United States

Abstract

AlGaAs/GaAs Narrow Base Heterojunction Bipolar Transistors (NBHBTs) with 50 angstroms thick bases exhibit maximum small signal common emitter current gains h_fe of 1400 at 300 K and 3000 at 80 K. The performance of the device is attributed to the superlattice graded emitter contact and a novel planar base access fabrication process. Low temperature measurements indicate that the maximum current gain increases exponentially with decreasing temperature until is saturates around 200 K, suggesting a tunnelling limited current transport mechanism.

Citation Download Citation

Kiki Ikossi-Anastasiou, Andris Ezis, Keith Evans, and Charles Ed Stutz "Low-temperature characterization of high-current-gain AlGaAs/GaAs narrow-base heterojunction bipolar transistor", Proc. SPIE 1680, High-Speed Electronics and Optoelectronics, (3 September 1992); https://doi.org/10.1117/12.137715

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