XUV projection lithography: is optical surface contamination an important limitation?

Marion L. Scott; Brian Emerson Newnam

doi:10.1117/12.147393

24 June 1993 XUV projection lithography: is optical surface contamination an important limitation?

Marion L. Scott, Brian Emerson Newnam

Proceedings Volume 1848, 24th Annual Boulder Damage Symposium Proceedings -- Laser-Induced Damage in Optical Materials: 1992; (1993) https://doi.org/10.1117/12.147393
Event: Optical Materials for High Power Lasers, 1992, Boulder, CO, United States

Abstract

We report results of an extensive set of oxide and carbon film contamination experiments with Al, Si, Rh, and Ag films and surfaces to quantify the film growth rates and parameter dependencies. These four materials were selected initially because they exhibit total external reflectance at moderate angles of incidence, e.g., > 45 degree(s), as needed for high- reflectance multifacet mirrors. In addition, these materials are candidate films for single- surface and multilayer mirrors at normal incidence as well as transmission filters in XUV projection lithography optical systems. (Abstract only)

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Marion L. Scott and Brian Emerson Newnam "XUV projection lithography: is optical surface contamination an important limitation?", Proc. SPIE 1848, 24th Annual Boulder Damage Symposium Proceedings -- Laser-Induced Damage in Optical Materials: 1992, (24 June 1993); https://doi.org/10.1117/12.147393

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