9 June 1993Long-lifetime silicon photoconductive semiconductor switches
Guillermo M. Loubriel, Fred J. Zutavern, Gary J. Denison, Wesley D. Helgeson, Dan L. McLaughlin, Marty W. O'Malley, C. H. Sifford, L. C. Beavis, Carl H. Seager, Arye Rosen, Richard G. Madonna
Guillermo M. Loubriel,1 Fred J. Zutavern,1 Gary J. Denison,1 Wesley D. Helgeson,1 Dan L. McLaughlin,1 Marty W. O'Malley,1 C. H. Sifford,1 L. C. Beavis,1 Carl H. Seager,1 Arye Rosen,2 Richard G. Madonna3
1Sandia National Labs. (United States) 2David Sarnoff Research Ctr. (United States) 3Grumman Corporate Research Ctr. (United States)
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We present the results of experiments aimed at improving the lifetime (longevity) of Si photoconductive semiconductor switches (PCSS). Because damage at the metal-semiconductor interface is the primary damage mechanism in most PCSS, we have tested different contact metallizations. The test setup utilizes: a Nd:YAG laser that operates at 540 Hz with 50 mJ, 10 ns FWHM pulses; a circuit that charges a 50 (Omega) line in 800 ns and discharges it in 20 ns through a 50 (Omega) load; and a lateral switch geometry and 0.25 cm by 0.25 cm switches. The contacts examined include: Cr(diffused)-Cr-Mo-Au, Al(diffused)-Cr-Mo-Au, 31P(ion implanted)-Ti-Pt, Al(diffused)-Pt-Ti-Pd-Au, and edge contacts. In the case of the Cr contacts we have tried thicker Mo or Au layers. For the Al contacts we have tried 1 micrometers and 0.1 micrometers thick depositions. Most contacts survived 107 pulses when switching 32 kV/cm (8 kV over 0.25 cm). The Al diffused went up to 44 kV/cm (1 X 105 pulses). The implanted P switch was switched 2.2 X 107 times at 44 kV/cm and 0.9 X 106 times at 48 kV/cm.
Guillermo M. Loubriel,Fred J. Zutavern,Gary J. Denison,Wesley D. Helgeson,Dan L. McLaughlin,Marty W. O'Malley,C. H. Sifford,L. C. Beavis,Carl H. Seager,Arye Rosen, andRichard G. Madonna
"Long-lifetime silicon photoconductive semiconductor switches", Proc. SPIE 1873, Optically Activated Switching III, (9 June 1993); https://doi.org/10.1117/12.146560
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Guillermo M. Loubriel, Fred J. Zutavern, Gary J. Denison, Wesley D. Helgeson, Dan L. McLaughlin, Marty W. O'Malley, C. H. Sifford, L. C. Beavis, Carl H. Seager, Arye Rosen, Richard G. Madonna, "Long-lifetime silicon photoconductive semiconductor switches," Proc. SPIE 1873, Optically Activated Switching III, (9 June 1993); https://doi.org/10.1117/12.146560