Silylation and dry development of e-beam resist

Lothar Bauch; Monika Boettcher; A. Wolff; Ulrich A. Jagdhold; I. Ludwig; Georg G. Mehliss

doi:10.1117/12.146532

24 June 1993 Silylation and dry development of e-beam resist

Lothar Bauch, Monika Boettcher, A. Wolff, Ulrich A. Jagdhold, I. Ludwig, Georg G. Mehliss

Proceedings Volume 1924, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III; (1993) https://doi.org/10.1117/12.146532
Event: SPIE'S 1993 Symposium on Microlithography, 1993, San Jose, CA, United States

Abstract

Outgoing from the experience in the photolithography it is investigated to use the resist silylation for a surface imaging method in the EBL. The advantage of this process will be seen in the possible high aspect ratio as it is needed for wafer direct writing.

Citation Download Citation

Lothar Bauch, Monika Boettcher, A. Wolff, Ulrich A. Jagdhold, I. Ludwig, and Georg G. Mehliss "Silylation and dry development of e-beam resist", Proc. SPIE 1924, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III, (24 June 1993); https://doi.org/10.1117/12.146532

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