Light emission from hot carriers in polar semiconductor devices

Paolo Lugli; Aldo Di Carlo; Peter Vogl; G. Zandler

doi:10.1117/12.162762

19 November 1993 Light emission from hot carriers in polar semiconductor devices

Paolo Lugli, Aldo Di Carlo, Peter Vogl, G. Zandler

Proceedings Volume 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II; (1993) https://doi.org/10.1117/12.162762
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications II, 1993, Trieste, Italy

Abstract

We present a theoretical study of hot-carrier induced light emission in III-V semiconductor devices. Carrier heating under the intense electric fields present under high bias conditions are studied via a selfconsistent Monte Carlo simulation. The carrier distribution functions obtained from the simulation are then incorporated into a pseudo-potential algorithm that describes the direct optical transitions and calculates the corresponding spectra. We show that the light emission due to hot carriers is dominated by direct radiative interband transitions within the conduction and valence bands. Good agreement between theory and experiment is obtained for GaAs MESFET and GaAs/AlGaAs HBTs.

Citation Download Citation

Paolo Lugli, Aldo Di Carlo, Peter Vogl, and G. Zandler "Light emission from hot carriers in polar semiconductor devices", Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); https://doi.org/10.1117/12.162762

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