Monte-Carlo Study Of Ballistic Transport In Heterojunction Bipolar Transistors (HJBTs) And In High Electron Mobility Transistors (HEMTs)

J. L. Pelouard; R. Castagne; P. Hesto

doi:10.1117/12.940929

2 February 1988 Monte-Carlo Study Of Ballistic Transport In Heterojunction Bipolar Transistors (HJBTs) And In High Electron Mobility Transistors (HEMTs)

J. L. Pelouard, R. Castagne, P. Hesto

Author Affiliations +

Proceedings Volume 0795, Characterization of Very High Speed Semiconductor Devices and Integrated Circuits; (1988) https://doi.org/10.1117/12.940929
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States

Abstract

The scaling of device geometry down to submicron dimensions is the guideline to improve the IC's performances. On other hand the very high electric fields present in short stuctures lead to non-stationnary transport phenomena. We will distinguish velocity overshoot due to low velocity relaxation times and ballistic transport where electrons fly without collision. Two kinds of devices showing these phenomena will be presented: HEMT's in which high carrier densities flow with velocity overshoot and HJBT's in which the conduction band discontinuity permits a ballistic injection in the base. Technological tendencies, performances and limitations for these two devices will be reviewed.

Citation Download Citation

J. L. Pelouard, R. Castagne, and P. Hesto "Monte-Carlo Study Of Ballistic Transport In Heterojunction Bipolar Transistors (HJBTs) And In High Electron Mobility Transistors (HEMTs)", Proc. SPIE 0795, Characterization of Very High Speed Semiconductor Devices and Integrated Circuits, (2 February 1988); https://doi.org/10.1117/12.940929

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