Lead sulfide infrared detectors

V. Subramanian; K. K. Janarda Pillai; K. R. Murali; N. Rangarajan

doi:10.1117/12.164933

7 December 1993 Lead sulfide infrared detectors

V. Subramanian, K. K. Janarda Pillai, K. R. Murali, N. Rangarajan

Proceedings Volume 2021, Growth and Characterization of Materials for Infrared Detectors; (1993) https://doi.org/10.1117/12.164933
Event: SPIE's 1993 International Symposium on Optics, Imaging, and Instrumentation, 1993, San Diego, CA, United States

Abstract

The photosensitivity of lead chalcogenides in the IR region has been known for a long time. These detectors exhibit wide range of electrical characteristics. A cheap and easy chemical bath deposition process has been utilized to deposit PbS onto glass substrates. Well adherent nonporous `p' type PbS films of thickness 1 - 1.5 microns were obtained. These films, after heat treatment, showed a dark resistance of 0.5 - 1 M(Omega) with a high signal-to-noise ratio of 1000 with a D^* (800 degree(s)C, 500 Hz, 2 Hz) of 2.6 X 10¹⁰ cm Hz^1/2 W^-1.

Citation Download Citation

V. Subramanian, K. K. Janarda Pillai, K. R. Murali, and N. Rangarajan "Lead sulfide infrared detectors", Proc. SPIE 2021, Growth and Characterization of Materials for Infrared Detectors, (7 December 1993); https://doi.org/10.1117/12.164933

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