Optical rectification and terahertz emission in the semiconductors excited above the bandgap

Jacob B. Khurgin

doi:10.1117/12.175894

6 May 1994 Optical rectification and terahertz emission in the semiconductors excited above the bandgap

Jacob B. Khurgin

Proceedings Volume 2142, Ultrafast Phenomena in Semiconductors; (1994) https://doi.org/10.1117/12.175894
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

A rigorous theory of the optical rectification in the zinc-blende semiconductors is developed. This theory combines the bonding orbitals representation of the electrons in the semiconductor with the band structure representation. It is shown that when the semiconductor is excited above the absorption edge there is a strong resonant enhancement of the optical rectification signal and connected with it emission of the terahertz radiation. Both the magnitude and the temporal characteristics of this signal are closely related to the intraband relaxation processes in the valence band.

Citation Download Citation

Jacob B. Khurgin "Optical rectification and terahertz emission in the semiconductors excited above the bandgap", Proc. SPIE 2142, Ultrafast Phenomena in Semiconductors, (6 May 1994); https://doi.org/10.1117/12.175894

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