Investigation of porous silicon by Raman scattering and second-harmonic generation techniques

Leonid A. Golovan; Andrei V. Zoteyev; Pavel K. Kashkarov; Viktor Yu. Timoshenko

doi:10.1117/12.175015

2 May 1994 Investigation of porous silicon by Raman scattering and second-harmonic generation techniques

Leonid A. Golovan, Andrei V. Zoteyev, Pavel K. Kashkarov, Viktor Yu. Timoshenko

Proceedings Volume 2150, Design, Simulation, and Fabrication of Optoelectronic Devices and Circuits; (1994) https://doi.org/10.1117/12.175015
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

A combination of Raman spectroscopy and second-harmonic generation techniques was used in the investigation of porous silicon structure. The Raman spectra evidence that our samples consist of microcrystals with the size about (3 - 4) nm. The nonlinear optical data show that there is not appreciable crystal cell distortion in the silicon nanoclusters of porous layer.

Citation Download Citation

Leonid A. Golovan, Andrei V. Zoteyev, Pavel K. Kashkarov, and Viktor Yu. Timoshenko "Investigation of porous silicon by Raman scattering and second-harmonic generation techniques", Proc. SPIE 2150, Design, Simulation, and Fabrication of Optoelectronic Devices and Circuits, (2 May 1994); https://doi.org/10.1117/12.175015

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