Photoluminescence studies of carbon- and oxygen-related radiation damage point defects in crystalline silicon

T. K. Kwok

doi:10.1117/12.190745

26 October 1994 Photoluminescence studies of carbon- and oxygen-related radiation damage point defects in crystalline silicon

T. K. Kwok

Author Affiliations +

Proceedings Volume 2364, Second International Conference on Thin Film Physics and Applications; (1994) https://doi.org/10.1117/12.190745
Event: Thin Film Physics and Applications: Second International Conference, 1994, Shanghai, China

Abstract

When the dicarbon point defect with photoluminescence line at 969 meV (7818 cm^-1) is thermally destroyed, previously unreported photoluminescence lines at 902.73 (7281), 919.72 (7418), 924.06 (7453), 935.09 (7542) and 949.85 meV (7661 cm^-1) are observed. It is shown that the point defects providing these photoluminescence lines consist of carbon and oxygen atoms. Previously reported photoluminescence sublines of the dicarbon center located at 951.16 (7671), 952.98 (7686), 953.96 (7694) and 956.91 meV (7718 cm^-1) are not observed in Czochralski silicon with high oxygen concentration. It is shown that vacancies are not the species to modify the dicarbon center forming these satellite sublines and interstitial silicon atoms are the remaining possibility.

Citation Download Citation

T. K. Kwok "Photoluminescence studies of carbon- and oxygen-related radiation damage point defects in crystalline silicon", Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); https://doi.org/10.1117/12.190745

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