SPER and characteristics of Si1-yCy alloys

Zhuo Yu; Jinzhong Yu; Buwen Cheng; Zhenlin Lei; Daizong Li; Qiming Wang; Junwu Liang

doi:10.1117/12.317996

12 August 1998 SPER and characteristics of Si_1-yC_y alloys

Zhuo Yu, Jinzhong Yu, Buwen Cheng, Zhenlin Lei, Daizong Li, Qiming Wang, Junwu Liang

Proceedings Volume 3551, Integrated Optoelectronics II; (1998) https://doi.org/10.1117/12.317996
Event: Photonics China '98, 1998, Beijing, China

Abstract

Si_1-yC_y alloys with carbon composition of 0.5 at% were successfully grown on n-Si(100) substrate by solid phase epitaxy recrystallization. The result was presented in this paper. With the help of the SiO₂ capping layer, rather uniform carbon profile in amorphous Si layer was obtained by dual-energy implantation. Since ion-flow was small and implantation time was long enough, the emergency of (beta) -SiC was avoided and the dynamic annealing effect was depressed. The pre-amorphization of the Si substrate increased the fraction of the substitutions carbon and the two-step annealing reduced point defects. As a result, Si_1-yC_y alloys with high quality was recrystallized on Si substrate.

Citation Download Citation

Zhuo Yu, Jinzhong Yu, Buwen Cheng, Zhenlin Lei, Daizong Li, Qiming Wang, and Junwu Liang "SPER and characteristics of Si_1-yC_y alloys", Proc. SPIE 3551, Integrated Optoelectronics II, (12 August 1998); https://doi.org/10.1117/12.317996

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