Paper
13 September 1996 Spectrophotometry and beam profile reflectometry measurement of six layers in an SOI film stack
JingMin Leng, John J. Sidorowich, Y. D. Yoon, Jon L. Opsal, B. H. Lee, Giho Cha, Joo-Tae Moon, Sang-In Lee
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Abstract
We developed a robust measurement recipe for six layer SOI film stack. Both spectrometer and BPR were combined to characterize the plate and storage polysilicons. A new global optimization method was developed to find the best solution in parameter spaces with up to 12 parameters. Such a recipe was applied to production wafers with over 50 site die mapping. The 5 day repeatability shows the measurements were stable and robust.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
JingMin Leng, John J. Sidorowich, Y. D. Yoon, Jon L. Opsal, B. H. Lee, Giho Cha, Joo-Tae Moon, and Sang-In Lee "Spectrophotometry and beam profile reflectometry measurement of six layers in an SOI film stack", Proc. SPIE 2877, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing III, (13 September 1996); https://doi.org/10.1117/12.250935
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KEYWORDS
Oxides

Semiconducting wafers

Spectroscopy

Silicon

Scanning electron microscopy

Spectrophotometry

Reflectometry

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