Radiative lifetime in semiconductors: influence of photon recycling

Christoph H. Grein; Henry Ehrenreich; E. Runge

doi:10.1117/12.271179

15 April 1997 Radiative lifetime in semiconductors: influence of photon recycling

Christoph H. Grein, Henry Ehrenreich, E. Runge

Proceedings Volume 2999, Photodetectors: Materials and Devices II; (1997) https://doi.org/10.1117/12.271179
Event: Photonics West '97, 1997, San Jose, CA, United States

Abstract

A microscopic theory of radiative recombination including the effects of photon reabsorption has ben developed which does not make the traditional assumptions of spherical constant energy surfaces, Maxwell-Boltzmann statistics for carriers, and constant momentum matrix elements. Numerical results illustrating the effects of photon recycling will be discussed for superlattice and bulk infrared detector materials. The calculations employ realistic K.p band structures and matrix elements. The lifetime enhancement can be greater than an order of magnitude.

Citation Download Citation

Christoph H. Grein, Henry Ehrenreich, and E. Runge "Radiative lifetime in semiconductors: influence of photon recycling", Proc. SPIE 2999, Photodetectors: Materials and Devices II, (15 April 1997); https://doi.org/10.1117/12.271179

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